Quantum states in disordered media. II. Spatial charge carrier distribution

The space- and temperature-dependent electron distribution $n(\mathbf r,T)$ is essential for the theoretical description of opto-electronic properties disordered semiconductors. We present two powerful techniques to access without solving Schr\"odinger equation. First, we derive density non-degenerate electrons by applying Hamiltonian recursively random wave functions (RWF). Second, obtain a effective potential from application universal low-pass filter (ULF) acting on charge carriers in media. Thereby, full quantum-mechanical problem reduced quasi-classical an potential. numerically verify both approaches comparison with exact solution. Both prove superior widely used localization landscape theory (LLT) when compare our approximate results carrier mobility at elevated temperatures obtained RWF, ULF, LLT those solution